Seminar Announcement: Simone Normani
Data pubblicazione: 20-dic-2018 15.56.44
Thursday, 20 December 2018, 15:00
Sala Grande Palazzina B via alla Cascata 56/C
"Er3+-doped Ga-Ge-Sb-S glass PVD: A comparative study of sputtered and PLD thin films"
University of Pardubice, Department of Graphic Arts and Photophysics,
Pardubický, Czech Republic
Despite the renewed interest in rare earth-doped chalcogenide glasses that lies mainly in mid-IR applications, only few comprehensive studies so far have presented the photoluminescence of amorphous chalcogenide films from visible to mid-IR. This study reports the fabrication of luminescent PVD quaternary chalcogenide thin films using RF-sputtering and PLD and their characterization via EDS, SEM, XPS, Raman spectroscopy, AFM and ellipsometry. Several Er3+ emission bands from visible to mid-infrared were clearly observed in the PVD films. The study of 4I13/2 level lifetimes enables development of suitable deposition parameters. The variation in surface roughness is limited, which ensures reasonable optical losses (0.7-0.9 dB/cm). Mid-IR photoluminescence from Er3+- doped micro-waveguide was demonstrated at ~2.76 µm. Finally, the effects of annealing on the chalcogenide films spectroscopy and lifetimes were assessed. The luminescence from the visible to mid-IR generated using erbium doped chalcogenide wave-guiding micro-structures might find easy-to-use applications concerning telecommunication technologies or on-chip optical sensors for which luminescent sources or amplifiers operating at different wavelengths are required.