Seminar Announcement: Jonathan Bradley

Data pubblicazione: 14-giu-2018 13.53.40

Announcement

Tuesday, 12 June 2018, 15:00

Sala Grande Palazzina B via alla Cascata 56/C

"Microlasers on silicon chips based on high-Q rare-earth-doped aluminum oxide micro-trench resonators"

Jonathan Bradley

Barber-Gennum Chair in Information Technology, Department of Engineering Physics,

McMaster University

Abstract

We report on rare-earth-doped microcavity lasers monolithically integrated on silicon nanophotonic chips. The microlasers are based on a novel silicon-photonics- compatible and high-Q microresonator design, which includes a silicon dioxide trench filled with rare-earth-doped aluminum oxide and a co-integrated silicon nitride bus waveguide. In passive (undoped) microresonators we measure internal quality factors > 10⁶ at a wavelength of 1.5 µm. In ytterbium, erbium, and thulium- doped microcavities with diameters ranging from 80 to 200 µm we show lasing at 1.0, 1.5 and 1.9 µm, respectively. We observe sub-milliwatt lasing thresholds, approximately 10 times lower than previously demonstrated in monolithic rare- earth-doped lasers on silicon. The entire fabrication process, which includes post- processing deposition of the gain medium, is silicon-compatible and allows for integration of such lasers within integrated silicon photonic microsystems. Applications of such rare earth microlasers in integrated microsystems for communications and sensing will be discussed.