Seminar Announcement: Enrico Prati

Data pubblicazione: 20-feb-2017 7.57.30


Thursday, 16 February 2017, 15:00

Sala Grande Palazzina C via alla Cascata 56/C

"Single atom devices for nanoelectronics and nanophotonics"

Enrico Prati

Istituto di Fotonica e Nanotecnologie – Consiglio Nazionale delle Ricerche

Piazza Leonardo da Vinci 32, 20133 Milano


I introduce the recent advancements of single atom physics and technology in silicon devices. Single atom-based devices display a rich variety of physical phenomena ranging from quantum transport to control of single electrons, to Kondo effect and single photon emission. I review technological issues and future prospects in the field of quantum computing and quantum communications, including the most recent research of room temperature single photon regime from Er emission.

[1] E. Prati, M. Hori, F. Guagliardo, G. Ferrari, and T. Shinada, Anderson–Mott transition in arrays of a few dopant atoms in a silicon transistor, Nature Nanotechnology 7, 443–447 (2012) [IF 35.267].

[2] Y. Shimizu, ... E. Prati, Behavior of phosphorous and contaminants from molecular doping combined with a conventional spike annealing method, Nanoscale, 6(2), 706-710 (2014) [IF 7.760].

[3] A. Crippa, ..., and E. Prati, Valley blockade and multielectron spin-valley Kondo effect in silicon, Physical Review B, 92, 035424 (2015) [IF 3.691].

[4] E. Prati, K. Kumagai, M. Hori, and T. Shinada, Band transport across a chain of dopant sites in silicon over micron distances and high temperatures, Scientific Reports, 6, 19704 (2016) [IF 5.592].

[5] M. Celebrano…, and E. Prati, Room-temperature 1.54 μm photoluminescence of Er:Ox centers at extremely low concentration in silicon, submitted (2017)

Keywords: silicon, quantum information, quantum communications, single atom nanoelectronics.