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Seminar Announcement: Jonathan Bradley

posted Jun 14, 2018, 6:53 AM by Stefano Varas   [ updated Jun 14, 2018, 6:54 AM ]

Tuesday, 12 June 2018, 15:00
Sala Grande Palazzina B via alla Cascata 56/C

"Microlasers on silicon chips based on high-Q rare-earth-doped aluminum oxide micro-trench resonators"

Jonathan Bradley
Barber-Gennum Chair in Information Technology, Department of Engineering Physics,
McMaster University

We report on rare-earth-doped microcavity lasers monolithically integrated on silicon nanophotonic chips. The microlasers are based on a novel silicon-photonics- compatible and high-Q microresonator design, which includes a silicon dioxide trench filled with rare-earth-doped aluminum oxide and a co-integrated silicon nitride bus waveguide. In passive (undoped) microresonators we measure internal quality factors > 106 at a wavelength of 1.5 µm. In ytterbium, erbium, and thulium- doped microcavities with diameters ranging from 80 to 200 µm we show lasing at 1.0, 1.5 and 1.9 µm, respectively. We observe sub-milliwatt lasing thresholds, approximately 10 times lower than previously demonstrated in monolithic rare- earth-doped lasers on silicon. The entire fabrication process, which includes post- processing deposition of the gain medium, is silicon-compatible and allows for integration of such lasers within integrated silicon photonic microsystems. Applications of such rare earth microlasers in integrated microsystems for communications and sensing will be discussed.

Stefano Varas,
Jun 14, 2018, 6:53 AM