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Seminar Announcement: Jonathan Bradley

posted Jun 14, 2018, 6:53 AM by Stefano Varas   [ updated Jun 14, 2018, 6:54 AM ]

Announcement
Tuesday, 12 June 2018, 15:00
Sala Grande Palazzina B via alla Cascata 56/C

"Microlasers on silicon chips based on high-Q rare-earth-doped aluminum oxide micro-trench resonators"

Jonathan Bradley
Barber-Gennum Chair in Information Technology, Department of Engineering Physics,
McMaster University

Abstract
We report on rare-earth-doped microcavity lasers monolithically integrated on silicon nanophotonic chips. The microlasers are based on a novel silicon-photonics- compatible and high-Q microresonator design, which includes a silicon dioxide trench filled with rare-earth-doped aluminum oxide and a co-integrated silicon nitride bus waveguide. In passive (undoped) microresonators we measure internal quality factors > 106 at a wavelength of 1.5 µm. In ytterbium, erbium, and thulium- doped microcavities with diameters ranging from 80 to 200 µm we show lasing at 1.0, 1.5 and 1.9 µm, respectively. We observe sub-milliwatt lasing thresholds, approximately 10 times lower than previously demonstrated in monolithic rare- earth-doped lasers on silicon. The entire fabrication process, which includes post- processing deposition of the gain medium, is silicon-compatible and allows for integration of such lasers within integrated silicon photonic microsystems. Applications of such rare earth microlasers in integrated microsystems for communications and sensing will be discussed.

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Stefano Varas,
Jun 14, 2018, 6:53 AM