Thursday, 16 February 2017, 15:00
Sala Grande Palazzina C via alla Cascata 56/C
Single atom devices for nanoelectronics and nanophotonics
Istituto di Fotonica e Nanotecnologie – Consiglio Nazionale delle Ricerche
Piazza Leonardo da Vinci 32, 20133 Milano
I introduce the recent advancements of single atom physics and technology in silicon devices. Single atom-based devices display a rich variety of physical phenomena ranging from quantum transport to control of single electrons, to Kondo effect and single photon emission. I review technological issues and future prospects in the field of quantum computing and quantum communications, including the most recent research of room temperature single photon regime from Er emission.
 E. Prati, M. Hori, F. Guagliardo, G. Ferrari, and T. Shinada, Anderson–Mott transition in arrays of a few dopant atoms in a silicon transistor, Nature Nanotechnology 7, 443–447 (2012) [IF 35.267].
 Y. Shimizu, ... E. Prati, Behavior of phosphorous and contaminants from molecular doping combined with a conventional spike annealing method, Nanoscale, 6(2), 706-710 (2014) [IF 7.760].
 A. Crippa, ..., and E. Prati, Valley blockade and multielectron spin-valley Kondo effect in silicon, Physical Review B, 92, 035424 (2015) [IF 3.691].
 E. Prati, K. Kumagai, M. Hori, and T. Shinada, Band transport across a chain of dopant sites in silicon over micron distances and high temperatures, Scientific Reports, 6, 19704 (2016) [IF 5.592].
 M. Celebrano…, and E. Prati, Room-temperature 1.54 μm photoluminescence of Er:Ox centers at extremely low concentration in silicon, submitted (2017)
Keywords: silicon, quantum information, quantum communications, single atom nanoelectronics.